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. 2024 Oct 16;14:24294. doi: 10.1038/s41598-024-75576-x

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© The Author(s) 2024

Open Access This article is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License, which permits any non-commercial use, sharing, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if you modified the licensed material. You do not have permission under this licence to share adapted material derived from this article or parts of it. The images or other third party material in this article are included in the article’s Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by-nc-nd/4.0/.

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Fig. 1 — SEM micrographs of the fabrication process of the single-crystal device: (a) Protective Pt deposit grown by FIBID. (b) Pre-cut lamella attached to the Omniprobe. (c) TEM grid with the lamella after the cleaning process. (d) Landing of the lamella in the region between the gold pads of the chips. Green rectangle represents the pattern of the Pt deposit by FIBID. (e) First part of the Pt leads grown by FIBID at . (f) Final functional Bi₂Se₃ single-crystal device. (g) 3D scheme of the fabrication process, from the starting point in which we have a Bi₂Se₃ single crystal (fig. a) to the lamella landed on the final substrate (fig. e).

Inline graphic — SEM micrographs of the fabrication process of the single-crystal device: (a) Protective Pt deposit grown by FIBID. (b) Pre-cut lamella attached to the Omniprobe. (c) TEM grid with the lamella after the cleaning process. (d) Landing of the lamella in the region between the gold pads of the chips. Green rectangle represents the pattern of the Pt deposit by FIBID. (e) First part of the Pt leads grown by FIBID at . (f) Final functional Bi₂Se₃ single-crystal device. (g) 3D scheme of the fabrication process, from the starting point in which we have a Bi₂Se₃ single crystal (fig. a) to the lamella landed on the final substrate (fig. e).