Table 2. Summary of SCVD Synthesis of 2D TMDs.
TMDs | Source materials | Phase | Morphology | Thickness | Temperature (°C) | Substrate | Carrier gas (sccm) | Growth time [min] |
---|---|---|---|---|---|---|---|---|
MoS2 | (NH4)2MoS4 + S32 | 2H | Nanosheet | 1.5–2 nm | 700 | SiO2/Si | 300Ar | 14 |
Na2MoO4 + NaOH + S33 | 2H | Nanosheet | 2.07 nm | 800 | Sapphire | 2 | ||
(NH4)2MoO4 + KOH + S22 | 2H | Film | 0.7 nm | 750 | Sapphire/SiO2/Si | 30Ar | 10 | |
MoO3 + NH4OH + S34 | 2H | Nanosheet | Monolayer | 760–880 | Glass | 150Ar | 5 | |
(NH4)6Mo7O24·4H2O + S35 | 2H | Film | 0.6–2.5 nm | 800 | SiO2/Si | 100Ar | 10 | |
Na2MoO4·2H2O + C12H25SH36 | 2H | Nanosheet | Monolayer | 850 | SiO2/Si | 10Ar | 60 | |
(NH4)2MoO4 + KI + S37 | 2H | Film | 1 nm | 720 | SiO2/Si | 30Ar | 3–5 | |
(NH4)2MoS417 | 2H | Film | 2 nm | 1000 | Sapphire, SiO2/Si | 80%Ar/20%H2 | 30 | |
(NH4)2MoO4 + S29 | 2H | Nanosheet | 0.78 nm | 750 | Sapphire | Ar | 20 | |
(NH4)2MoS438 | 2H | Film | 2–30 nm | 700 | SiO2/Si | 96%Ar/4% H2 | 60 | |
Na2MoO4·2H2O + (C2H5)2S39 | 2H | Film | 0.7 nm | 850 | Sapphire, SiO2/Si | 350Ar/10 H2 | 20 | |
Na2MoO4 + Mo(CO)6 + CH3SSCH340 | 2H | Film | 0.9 nm | 850 | SiO2/Si | 350Ar/15H2 | 20 | |
MoO3 + NH4OH + S41 | 2H | Film | 0.8 nm | 800 | SiO2/Si | 150Ar | 5 | |
Na2MoO4 + S19 | 2H | Nanosheet | Monolayer | 730–750 | soda lime glass slide | 80Ar | 10–20 | |
Na2MoO4 + ZnS42 | 2H | Nanosheet | Monolayer | 780 | Sapphire/SiO2/Si | 100Ar | 10–60 | |
(NH4)2MoO4 + KI + S24 | 2H | Film | Monolayer | 800 | Sapphire | Ar | 10 | |
MoSe2 | (NH4)2MoO4 + KI + Se24 | 2H | Film | Monolayer | 800 | sapphire | Ar/H2 | 10 |
Na2MoO4 + Se19 | 2H | Nanosheet | Monolayer | 750–800 | soda lime glass slide | 80Ar/8 H2 | 10–20 | |
Na2MoO4 + ZnSe42 | 2H | Nanosheet | Monolayer | 800 | Sapphire/SiO2/Si | 100Ar | 10–60 | |
Na2MoO4 + Na2SeO320 | 2H | Nanosheet | Monolayer | 775–850 | SiO2/Si | 190Ar/10H2 | 5–10 | |
WS2 | (NH4)10H2(W2O7)6 + S32 | 2H | Nanosheet | 1.5–2 nm | 700 | SiO2/Si | 300Ar | 14 |
Na2WO4·H2O + N2H4 + (CH3)2S243 | 2H | Film | 0.65 nm | 850 | SiO2/Si | 350Ar | 30 | |
Na2WO4 + S19 | 2H | Nanosheet | Monolayer | 730–780 | soda lime glass slide | 80Ar/4H2 | 10–20 | |
Na2WO4 + ZnS42 | 2H | Nanosheet | Monolayer | 930 | Sapphire/SiO2/Si | 100Ar | 10–60 | |
(NH4)2WO4 + KI + S24 | 2H | Film | Monolayer | 850 | sapphire | Ar/H2 | 10 | |
WSe2 | Na2WO4 + ZnSe42 | 2H | Nanosheet | Monolayer | 820 | Sapphire/SiO2/Si | 100Ar | 10–60 |
(NH4)2WO4 + KI + Se24 | 2H | Film | Monolayer | 850 | sapphire | Ar/H2 | 10 | |
MoTe2 | Na2MoO4 + Te19 | 1T’ | Nanosheet | 730–750 | soda lime glass slide | 120Ar/20H2; | 10–20 | |
(NH4)6Mo7O24·4H2O + C24H39NaO5 + Te27 | 1T’ | Nanosheet | 0.8 nm | 700/500 | SiO2/Si | 400N2/25H2; | 5 | |
Na2MoO4 + ZnTe42 | 2H | Nanosheet | Monolayer | 750–800 | Sapphire/SiO2/Si | 100Ar | 10–60 | |
Na2MoO4 + ZnTe42 | 1T’ | Nanosheet | Monolayer | 800 | Sapphire/SiO2/Si | 100Ar | 10–60 | |
(NH4)6Mo7O24 + NaOH + Te44 | 1T’ | Nanosheet | 0.82 ± 0.04 nm | 730 | SiO2/Si | 100Ar/3H2 | 15 | |
WTe2 | Na2WO4 + ZnTe42 | 1T’ | Nanosheet | Monolayer | 780 | Sapphire/SiO2/Si | 100Ar | 10–60 |
(NH4)6H2W12O40 + Te28 | 1T’ | Nanosheet | 0.8 nm | 650 | SiO2/Si | N2/H2 | 6 | |
Na2WO4 + Na2TeO320 | 1T’ | Nanosheet | 2.1 nm | 775–825 | sapphire | 95Ar/5H2 | 5 | |
NbSe2 | C4H4NNbO9·xH2O + NaOH + Se21 | 2H | Nanosheet | 0.7 nm | 800 | SiO2/Si | 600N2/15H2 | 20 |
ReSe2 | NaReO4 + Na2SeO320 | 1T’ | Nanosheet | 750 | sapphire | 190Ar/10H2 | 5–10 |