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. 2024 Oct 18;17(20):5095. doi: 10.3390/ma17205095

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© 2024 by the authors.

Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).

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Diffuse reflectance spectra of SnO₂ films. Panels (a–j) display the effects of reaction and sintering temperatures with and without TTIP on the SnO₂ samples. Reaction temperatures are 100 °C and 110 °C, and sintering temperatures are 400 °C and 500 °C: (a) reaction at 100 °C, (b) reaction at 110 °C, (c) reaction at 100 °C/sintering at 400 °C without TTIP, (d) reaction at 100 °C/sintering at 500 °C without TTIP, (e) reaction at 110 °C/sintering at 400 °C without TTIP, (f) reaction at 110 °C/sintering at 500 °C without TTIP, (g) reaction at 100 °C/sintering at 400 °C with TTIP, (h) reaction at 100 °C/sintering at 500 °C with TTIP, (i) reaction at 110 °C/sintering at 400 °C with TTIP, and (j) reaction at 110 °C/sintering at 500 °C with TTIP.

Diffuse reflectance spectra of SnO₂ films. Panels (a–j) display the effects of reaction and sintering temperatures with and without TTIP on the SnO₂ samples. Reaction temperatures are 100 °C and 110 °C, and sintering temperatures are 400 °C and 500 °C: (a) reaction at 100 °C, (b) reaction at 110 °C, (c) reaction at 100 °C/sintering at 400 °C without TTIP, (d) reaction at 100 °C/sintering at 500 °C without TTIP, (e) reaction at 110 °C/sintering at 400 °C without TTIP, (f) reaction at 110 °C/sintering at 500 °C without TTIP, (g) reaction at 100 °C/sintering at 400 °C with TTIP, (h) reaction at 100 °C/sintering at 500 °C with TTIP, (i) reaction at 110 °C/sintering at 400 °C with TTIP, and (j) reaction at 110 °C/sintering at 500 °C with TTIP.