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. 2024 Oct 19;14(20):1679. doi: 10.3390/nano14201679

Figure 8.

Figure 8

(a) Impacts of dry-O annealing at various temperatures on the SS, μsat, and Vth of a-IGZO TFTs. (b) Transfer characteristics of both the as-deposited TFT and a-IGZO TFTs post-annealed in various environments. (c) SS, μsat, normalized current (Ion, norm), and Vth of a-IGZO TFTs with and without Ar plasma treatment along channel lengths (L). (a) Reprinted from [83], Copyright (2013) by AIP Publishing. (b) Reprinted from [86], Copyright (2011) by American Scientific Publishers. (c) Reprinted from [87], Copyright (2016) by IEEE.