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. 2024 Oct 19;14(20):1679. doi: 10.3390/nano14201679

Figure 13.

Figure 13

(a) Single-particle defect levels at k-sites observed in 4H-SiC, including VC, VSi, CSi, SiC, Ci, and Sii. (b) Migration barriers of different intrinsic defects in 4H-SiC (left) and migration barriers of VC at different charge states (right). (c) Migration paths of VC(k) (left) and VC(h) (right) in 4H-SiC. (d) Atomic structures, coordinate configurations, and migration barriers of Ci defects in n-type 4H-SiC at charge states q = 0, −1, and −2. (a,b) Reprinted with permission from [135], Copyright (2020) by AIP Publishing. (c,d) Reprinted from [151,152], Copyright (2019 and 2021) by American Physical Society.