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Schematic structures of typical SiC power devices, such as the (a) Junction-Barrier Schottky diode (modified structure of a Schottky barrier diode), (b) PiN diode, (c) planar-type vertical MOSFET, and (d) insulated gate bipolar transistor (IGBT). (e) Major application ranges in terms of the device blocking voltage for Si, SiC, GaN, and Ga2O3 power switching devices. (a–e) Reprinted from [276], Copyright (2022) by The Japan Academy.
