Table 2.
The performance of a-IGZO TFTs using different preparation methods and metal atomic composition ratios. μsat and μFE represent saturation and field-effect mobilities.
| Ref | Method | W/L (μm/μm) | Dielectric | In:Ga:Zn | Mobility (cm2/V·s) |
SS (V/dec) | Ion/Ioff | Vth (V) |
|---|---|---|---|---|---|---|---|---|
| [23] | Sputtering | (100–300)/(10–50) | SiO2 | 37:13:50 | 12 (μsat) | – | 108 | 3 |
| [27] | Sputtering | 25/25 | SiO2 | 2:1:2 | 52 (μFE) | 0.25 | 108 | 1 |
| 4:1:2 | 74 (μFE) | 0.29 | 108 | 0.2 | ||||
| [28] | Sputtering | 25/25 | SiO2 | 3:6:2 | 52 (μFE) | 0.25 | – | 1.9 |
| [29] | Solution | 160/20 | Al2O3 | 3:1:1 | 3 (μsat) | 0.073 | 106 | – |
| [30] | Solution | 1500/100 | Al2O3 | 5:1:1 | 9 | 0.22 | 106 | 0.2 |
| [31] | Solution | 300/30 | HfO2 | 9:1:2 | 86 (μFE) | 0.14 | – | −0.3 |
| [5] | PEALD | 40/20 | SiO2 | 23:14:8 | 74 (μsat) | 0.26 | 109 | −1.3 |
| [32] | PEALD | 40/20 | SiO2 | 5:3:1 | 24 (μsat) | 0.29 | 108 | 0.5 |
| 64:15:22 | 44 (μsat) | 0.25 | 109 | −1.1 |