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. 2024 Oct 9;10(20):e39083. doi: 10.1016/j.heliyon.2024.e39083

Table 10.

The table illustrates the comparison of present and previous studies of this research.

Property Present Study Previous Study
TEM Pure Te the interplanar spacing of the nanocrystal is 0.417 nm, 0.395 nm, 0.443 nm. The interplanar spacing of the Tellurium nanocrystal is 0.235 and 0.206 nm [46].
Te + Gr the interplanar spacing of the nanocrystal is 0.307 nm, 0.308 nm, 0.335 nm.
Te + Si + Gr the interplanar spacing of the nanocrystal is 0.396 nm, 0.424 nm.
Te + Si the interplanar spacing of the nanocrystal is 0.224 nm, 0.229 nm.
TGA&DSC Sample Name Temperature (0–700 °C) The Te content in the composite (Te@MPC) was determined to be 68.0 wt % by thermogravimetric analysis (TGA). Temperature ranges from 0 to 700 °C [47].
Note: Microporous Carbon (MPC)
Pure Te 61.66 wt%
Te + Si + Gr 49.86 wt%
Te + Si 50.94 wt%
Te + Si 44.82 wt%
CV Scan rate (mV/s) Scan rate (mV/s)
Sample Name 25 mV/s 50 mV/s 100 mV/s Sample Name 10–50 mV/s
Pure Te 709.23 mAh/g 480.10 mAh/g 186.96 mAh/g SeCoOTe/F 752.95C/g or 209.15 mAh/g [48]
Te + Gr 621.93 190.73 196.04 SCoOTe/NF 512.40C/g or 142.33 mAh/g [48]
Te + Si + Gr 173.11 212.40 216.40 CoOTe/NF 485.15C/g or 134.76 mAh/g [48]
Te + Si 1486.91 507.71 474.47 Note-(1 mAh/g = 3.6C/g)
Ti5Te4/P@C 440 mAh/g [49]
Ti5Te4/P(30 wt%)@C 300 mA/g [49]
EIS Charge transfer resistance (Rct) Charge transfer resistance (Rct)
Sample Name P-CoOTe/NF 18.5 Ω [48]
CoOTe/NF 20.99 Ω [48]
Pure Te 759.07 Ω
Te + Gr 4.21 Ω
Te + Si + Gr 36.39 Ω
Te + Si 164.905 Ω