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. 2024 Nov 4;15:9509. doi: 10.1038/s41467-024-53882-2

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© The Author(s) 2024

Open Access This article is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License, which permits any non-commercial use, sharing, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if you modified the licensed material. You do not have permission under this licence to share adapted material derived from this article or parts of it. The images or other third party material in this article are included in the article’s Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by-nc-nd/4.0/.

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Fig. 2 — a Scanning electron-microscope image of the fabricated device with seven shield elements on each side. b Photoluminescence (PL) map showing several QDs in the centre of the phononic-crystal beam. c Resonance fluorescence (RF) charge-plateau scan of the negative trion (X¹⁻) of a QD close to the resonator’s centre. d Low-power frequency scan to determine the inhomogeneously-broadened linewidth, Γ_inh/2π = 550 MHz. The data are fitted to a Lorentzian. The transform limit (Γ_R/2π) and the sideband position (Δω_l = ± Ω_m) are shown.