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. 2024 Nov 7;15:9647. doi: 10.1038/s41467-024-53162-z

Fig. 2. Simulated hysteresis of the high-performance PSCs with different voltage scan rates and FR protocol.

Fig. 2

a device configuration diagram of simulated n-i-p PSC. b scan rates dependent JV characteristics of PSC, where “Ref” refers to the reference device without mobile ion.