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. 2024 Nov 7;15:9647. doi: 10.1038/s41467-024-53162-z

Fig. 4. Simulated hysteresis originated from the dominated surface recombination.

Fig. 4

The interfaces recombination between perovskite and CTLs with (a) τsurf = 10 ns and (b) τsurf = 1 ns. The simulated transient E-field at perovskite/HTL interface vs applied voltage compared with the corresponding hysteresis curves of (c) 0.1 V/s and (d) 1 V/s in (a). “Ref” refers to the reference device without mobile ion.