Table 2.

Strengths, weaknesses, and uses of different types of modeling employed in thin-film solar cell research.

Type of Modelling	Strengths	Weaknesses	Uses in Research
Band Diagram Modeling [38]	Allows visualization of band alignment and potential barriers.	Difficult to apply in complex materials, multiple layers, or heterostructures.	Device design and analysis of carrier transport efficiency.
Quantum Efficiency (QE) Modeling [39]	Analyzes the fraction of photons that generate useful charge carriers.	Does not account for other effects like recombination or resistive losses.	Study of spectral response and photon-to-current conversion.
Spectral Response Modeling [40]	Allows measurement of efficiency at different wavelengths.	Does not account for thermal losses or recombination effects.	Evaluation of spectral efficiency under various solar light conditions.
Optical Modeling [41]	Simulates light absorption and reflection within the cell structure.	Limited in long-term simulations or extreme operating conditions.	Optimization of light absorption to maximize quantum efficiency.
Light Trapping and Scattering Modeling [41]	Optimizes light capture in thin-film cells.	Complex to implement in advanced geometries.	Maximization of light absorption in thin-film structures.
I–V Modeling [41]	Provides information on efficiency, short-circuit current, and open-circuit voltage.	Insufficient for modeling dynamic or transient effects.	Characterization of overall device efficiency under different light conditions.
Electrical Modeling [41]	Studies the general electrical behavior of the device under different conditions.	Does not capture all optical or thermal phenomena.	Overall evaluation of electrical efficiency and performance under operating conditions.
Carrier Transport Modeling [42]	Allows detailed analysis of electron and hole movement within the cell.	Difficult to implement in devices with complex geometries or materials.	Simulation of charge transport to improve carrier mobility.
Recombination Mechanism Modeling [40]	Analyzes the rates and mechanisms of recombination within the device.	Difficult to model accurately in non-conventional materials.	Study of recombination to minimize losses in cell efficiency.
Series and Shunt Resistance Modeling [43]	Provides information on resistive losses within the device.	Cannot capture other non-resistive loss mechanisms.	Optimization of series and shunt resistances to improve conversion efficiency.
Material Properties Modeling [44]	Allows analysis of the impact of material properties on overall performance.	Requires precise data for the materials used.	Simulation of new materials or material combinations to improve efficiency.
Capacitance Modeling [45]	Useful for studying junction capacitance and behavior in response to frequencies.	Limited to specific operating conditions.	Analysis of capacitance as a function of frequency to characterize junction quality.
ETL and HTL Modeling [45]	Enables detailed analysis of electron and hole transport through selective layers.	Difficult to model interfaces and defects between layers accurately.	Optimization of ETL and HTL materials for improving charge carrier selectivity, minimizing recombination, and enhancing overall device efficiency.
Doping and Defect Modeling [46]	Evaluates the effect of doping and defects on cell performance.	It requires precise data and is difficult to validate experimentally.	Study of the impact of doping levels and defects on efficiency and device lifetime.
Interface Modeling [42]	Evaluates behavior at interfaces between different material layers.	Complex to simulate multiple interfaces.	Improvement in efficiency and reduction in recombination losses at interfaces.
Multi-Junction Modeling [45]	Studies the behavior of multi-junction devices to optimize efficiency.	Complexity in simulating multiple junctions.	Research of high-efficiency multi-junction solar cells.
Thermal Modeling [43]	Studies the effect of heat on device performance.	Difficult to integrate with optical or electrical models in complex simulations.	Simulation of behavior under extreme or fluctuating thermal conditions.
Transient Response Modeling [40]	Analyzes device behavior under rapid changes in illumination conditions.	Does not fully capture long-term effects.	Study of device response under fluctuating light conditions.
Photocurrent and Photovoltage Modeling [41]	Evaluates current and voltage generation under different lighting conditions.	Does not fully model long-term effects or degradation.	Optimization of the balance between photocurrent and photovoltage.
Lifetime and Degradation [44] Modeling	Evaluates long-term durability and efficiency.	Requires precise and long-term data, making implementation challenging.	Study of lifetime and degradation in efficiency over time.
Multiscale Modeling [42]	Integrates phenomena across different scales into a single simulation.	High computational load and difficult to validate experimentally.	Analysis of effects occurring at different spatial and temporal scales within the device.
Stress Effects Modeling [43]	Studies the impact of mechanical stresses on device structure.	Cannot capture all microstructural effects.	Analysis of structural integrity and mechanical durability under variable operating conditions.
Noise Modeling [44]	Analyzes the impact of electrical noise on device performance.	Relevant primarily in very high-efficiency devices.	Study of noise in the device to reduce interference.