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. 2024 Nov 4;14(21):1769. doi: 10.3390/nano14211769

Figure 8.

Figure 8

Experimental Raman (ex. 266 nm) data and Voigt mode fittings for AlGaN and AlN E2(high) modes in five AlxGa1−xN/AlN/sapphire samples with x(Al) of 60.2%, 71.4%, 75.3%, 81.1%, and 87.7%, respectively.