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. 2024 Nov 4;14(21):1769. doi: 10.3390/nano14211769

Figure 13.

Figure 13

(a) Variable temperature (20–300 K) PL spectra of the Al0.87Ga0.13N/AlN/sapphire sample. (b) Normalized integrated PL intensity vs. 1/T, fitted with Arrhenius formulism, obtaining the activation energy of Eact = 19.6 meV.