Table 3.
Values of AlxGa1−xN A1(LO) peak/FWHM, and calculated results of plasmon frequency/damping constant, phonon lifetime, and carrier concentration of five AlGaN films with high x(Al) between 60.2 and 87.7%.
| Sample Name (x%) | A60 (60.2%) | A71 (71.4%) | A75 (75.3%) | A81 (81.1%) | A87 (87.7%) |
|---|---|---|---|---|---|
| A1(LO) peak (cm−1) | 845.77 | 864.05 | 868.25 | 871.98 | 884.32 |
| A1(LO) FWHM (cm−1) | 25.88 | 20.82 | 16.67 | 10.64 | 17.26 |
| ωp (THz) | 0.159 | 0.163 | 0.164 | 0.164 | 0.167 |
| γp (THz) | 4.88 | 3.92 | 3.14 | 2.01 | 3.25 |
| τphonon (ps) | 0.205 | 0.255 | 0.318 | 0.498 | 3.07 |
| Fitting Accuracy | 97.01% | 87.24% | 79.92% | 77.21% | 87.92% |
| N (×1018 cm−3) | 7.51 | 9.17 | 10.9 | 12.2 | 15.5 |
Note: ωp (plasmon frequency), γp (plasmon damping constant), τphonon (phonon lifetime), N (carrier concentration).