Lattice constant a (Å), band gaps E_g (eV), gap type, and defect formation energy E_f of pure and doped boron nitride monolayers.

Monolayer	a (Å)	E g (eV)	Gap type	E f (Ha)
44BN	9.997	4.252	Indirect	N/A
C-BN	10.047	3.177	Direct	0.072
O-BN	10.118	1.805	Indirect	0.207
Si-BN	10.400	1.532	Indirect	0.911
P-BN	10.346	0.692	Direct	0.746