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. 2024 Nov 15;13:311. doi: 10.1038/s41377-024-01652-6

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© The Author(s) 2024

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 3 — a Schematics of the fabricated device structures with different bottom structures. b I–V characteristics for 1.0 μm AL InGaAs PD on InP, flat metal, GMR, and ideality factors as an inset figure (c) Surface leakage currents for 1 μm AL InGaAs PD with/without SU-8 passivation using size dependency. d I_ph–P_in characteristics for 0.5 and 1 μm AL PDs on GMR Si. e Calculated f_3dB for 15 × 15 μm² devices in terms of T_AL. f Calculated f_3dB as a function of device width to confirm the transit time limited bandwidth