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. 2024 Nov 16;3:172. doi: 10.1038/s44172-024-00316-y

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© The Author(s) 2024

Open Access This article is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License, which permits any non-commercial use, sharing, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if you modified the licensed material. You do not have permission under this licence to share adapted material derived from this article or parts of it. The images or other third party material in this article are included in the article’s Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by-nc-nd/4.0/.

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Fig. 2 — Schematic of (a) CW and (b) AMW with insets showing the individual resonator structure. c Calculated TM band structure of a hexagonal array of cylindrical silicon resonators with a period of 2 μm, height of 600 nm, and radius of 700 nm, showing a QBIC mode as a flat band (marked with black arrows) near the Γ point. The insets describe the magnetic and electric dipolar modes excited in each resonator that interfere to create the QBIC mode. d The calculated cross-sectional electric field profile at the resonance (λ = 3.06 μm) of the AMW resonators with a spacer thickness of 350 nm (weak coupling), showing very different field strengths in the two resonators. e Normal direction emissivity (ϵ) from the AMW toward the window side (higher emissivity, ϵ₊), open side (lower emissivity, ϵ₋) and Δϵ as a function of spacer thickness. The horizontal white line marks the spacer thickness (350 nm) considered in (d).