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. 2024 Nov 18;14:28545. doi: 10.1038/s41598-024-80212-9

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© The Author(s) 2024

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Fig. 1 — Potential profile of the double-barrier heterostructure based on AlGaAs. , , and , are the lengths of the b1, QW, and the b2, respectively. The height of the first barrier () is determined from the band offset between AlAs and the emitter, and the height of the second barrier () is proportional to , which is the fraction of aluminium in the alloy. V is the bias between the Fermi energy of the emitter and the Fermi level of the collector (), is the energy interval between the (E₀) and . The is the energy interval between E₀ and the conduction band edge of the b2 (.

Inline graphic — Potential profile of the double-barrier heterostructure based on AlGaAs. , , and , are the lengths of the b1, QW, and the b2, respectively. The height of the first barrier () is determined from the band offset between AlAs and the emitter, and the height of the second barrier () is proportional to , which is the fraction of aluminium in the alloy. V is the bias between the Fermi energy of the emitter and the Fermi level of the collector (), is the energy interval between the (E₀) and . The is the energy interval between E₀ and the conduction band edge of the b2 (.