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. 2024 Nov 19;14:28572. doi: 10.1038/s41598-024-79750-z

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© The Author(s) 2024

Open Access This article is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License, which permits any non-commercial use, sharing, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if you modified the licensed material. You do not have permission under this licence to share adapted material derived from this article or parts of it. The images or other third party material in this article are included in the article’s Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by-nc-nd/4.0/.

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Fig. 3 — XRD θ/2θ scan of W/Bi₂Te₃/WSe₂/SiO₂/Si stacked films before and after PMA from 200 to 450 °C extracted from (a) 1L WSe₂ and (b) > 10L WSe₂. The high-resolution scanning transmission electron microscope (STEM) cross-sectional images of 400 °C annealed W/Bi₂Te₃ stacked film as deposited on (c) 1L WSe₂ and (d) > 10L WSe₂. The yellow dashed line indicates the boundary between polycrystalline Bi₂Te₃ with tiny grain size and layered Bi₂Te₃.