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. 2024 Nov 19;14:28572. doi: 10.1038/s41598-024-79750-z

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© The Author(s) 2024

Open Access This article is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License, which permits any non-commercial use, sharing, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if you modified the licensed material. You do not have permission under this licence to share adapted material derived from this article or parts of it. The images or other third party material in this article are included in the article’s Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by-nc-nd/4.0/.

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Fig. 7 — (a) Comparison of I_D-V_G transfer curves of devices with Bi₂Te₃/W and Ni/Au S/D contacts on 285-nm-thick SiO₂ dielectrics. (b) Comparison of I_D-V_G transfer curves of devices with Bi₂Te₃/W contacts before and after the PMA process at different temperatures. (c) The linear scale of I_D-V_G transfer curves shown in Fig. 6b. (d) The comparison of I_G of devices with Bi₂Te₃/W contacts before and after the PMA process at different temperatures.

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