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. 2024 Nov 19;14:28572. doi: 10.1038/s41598-024-79750-z

Fig. 7.

Fig. 7

(a) Comparison of ID-VG transfer curves of devices with Bi2Te3/W and Ni/Au S/D contacts on 285-nm-thick SiO2 dielectrics. (b) Comparison of ID-VG transfer curves of devices with Bi2Te3/W contacts before and after the PMA process at different temperatures. (c) The linear scale of ID-VG transfer curves shown in Fig. 6b. (d) The comparison of IG of devices with Bi2Te3/W contacts before and after the PMA process at different temperatures.