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. 2024 Sep 23;11(43):2407175. doi: 10.1002/advs.202407175

Figure 10.

Figure 10

a) PL of the as‐exfoliated 1L‐MoS2, 2L‐MoS2, MoOx, and MoOx/MoS2. Integrated PL intensity of the as‐exfoliated 1L‐MoS2, 2L‐MoS2, MoOx, and MoOx/1L‐MoS2. Reproduced with permission.[ 79 ] Copyright 2021, American Chemistry Society. b) Optical image (left) and spatially resolved PL map (right) of the step‐like stacked MQWs. PL spectra of the SQWs (black line), DQWs (red line), and TQWs (blue line). Histograms for the integrated PL intensity (left) and full width half maximum (FWHM) (right) for the SQWs (gray), DQWs (red), and TQWs (blue). Reproduced under the terms of the CC‐BY‐NC 4.0 license.[ 147 ] Copyright 2021, The Authors, Published by American Association for the Advancement of Science. c) Optical images and the corresponding integrated PL intensity mappings of O‐doped and undoped WS2 monolayers. Scale bars in images are 20 µm. Reproduced with permission.[ 152 ] Copyright 2021, Wiley‐VCH. d) Ternary phase diagram of MoS2, indicating the possible reaction routes for the CVD growth of MoS2. XPS data of Mo 3d for a typical CVD MoS2 film grown under the sulfur‐mild condition, and an O‐MoS2 film showing the presence of Mo–O bonds in O‐MoS2. Typical PL spectra of O‐MoS2, SM‐MoS2, and SE‐MoS2 flakes grown on SiO2/Si substrates acquired in an ambient environment, showing the PL enhancement of O‐MoS2. Reproduced with permission.[ 153 ] Copyright 2022, Springer Nature. e) AFM topography of HfS2 flake after laser exposure. The insets are optical images before and after laser‐assisted oxidation. Scale bars are 5 µm. Compressive strain was induced in the center of a semiconducting HfS2 channel by controlled photo‐oxidation. The compression induced tensile strain away from the HfS2/HfO2 interface, resulting in the spatial modulation of the bandgap. The change in bandgap was represented as a function of strain in the two directions, with respect to the unstrained bandgap (relaxed lattice constant a 0  =  3.625 Å). Inset: calculated band structure of 1T‐HfS2. Reproduced under the terms of the CC‐BY 4.0 license.[ 26 ] Copyright 2018, The Authors, Published by Springer Nature.