Figure 12.

a) Top‐gated HfSe₂ transistor with native HfO₂ dielectric. Reproduced under the terms of the CC‐BY‐NC 4.0 license.^{[ 27 ]} Copyright 2017, The Authors, American Association for the Advancement of Science. b) Cross‐sectional representation of the gate interface states in MoS₂ VGG transistors. Transfer curves of the VGG transistors with different gate‐voltage sweeping speeds. Reproduced with permission.^{[ 93 ]} Copyright 2022, Springer Nature. c) Layer‐by‐layer oxidation of 2D Bi₂O₂Se under vacuum‐UV (185 nm) exposure at room temperature. Cross‐sectional STEM‐HAADF image of a uniform ultrathin lattice‐matched single‐crystalline 2D Bi₂O₂Se/β‐Bi₂SeO₅ heterostructure. Area‐selective oxidation with UV and photolithography mask free of polymers. Reproduced with permission.^{[ 171 ]} Copyright 2022, Springer Nature. d) Graphic cross section of a dual‐gate (DG) MoS₂ FET with a HfO₂/Al₂O₃/MoS₂/Al₂O₃ gate stack. Comparison of transfer curves of DG MoS₂ FETs demonstrating a similar, near‐ideal SS of ∼60 mV/dec with over an order of magnitude increase in the ON current for devices with O₂ plasma exposure at the contacts. Reproduced with permission.^{[ 77 ]} Copyright 2019, American Chemistry Society. e) I _d –V _g characteristics of WSe₂ FETs with and without a buffered‐WO_x layer. Reproduced under the terms of the CC‐BY 4.0 license.^{[ 175 ]} Copyright 2023, The Authors, Published by IEEE.