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. 2024 Nov 20;15:10047. doi: 10.1038/s41467-024-54285-z

Fig. 2. STEM characterization of BaTiO3 nanoisland.

Fig. 2

a Cross-sectional (110)Si STEM image showing two nanoislands in the thin BaTiO3 film. b Cross-sectional (110)Si high-angle annular dark-field high-resolution STEM image of the BaTiO3 nanoisland seen on the right side of (a). The region marked in the dashed rectangular is a protrusion under the BaTiO3 nanoisland, which originates from the excess of Sr and triggers the nucleation of the nanoisland. c The zoomed part of this region is represented by heavy atoms only (Sr and Ba). Edge dislocations with in-plane and out-of-plane Burgers vectors are indicated. d Rigid-body rotation map showing the rotation of the unit cells (black rectangular) and (e) Relative displacement rotation map showing the direction of Ti atoms displacement from the barycenter position of the Ba(Sr) cells, in the nanoisland and the thin film. The STEM images were obtained from the sample with the lower density of nanoislands shown in Fig. 1d, f.