. 2024 Nov 5;18(46):31834–31845. doi: 10.1021/acsnano.4c07820

Table 3. Structural Parameters of Fabricated Device Obtained from SEM Imaging (with Measurement Errors ≤5 nm) and the Simulated and Measured PEEs (NA = 0.81)^a.

structure	device parameters (nm)					PEE (%)		λ (nm)
structure	w_econ	r_m	w_g1,2	w_r1,2	t_etch	simulated	measured	λ (nm)
planar					0	1.75–2.32	1.69(59)	900–930
eCBG1	122	240	250, 368	137, 324	633	24.53	12.6(1.4)	918.1
eCBG2	132	245	240, 368	137, 328	633	31.93	30.4(3.4)	912.7

The simulations were performed using a linearly polarized dipole oriented 45° to the x-axis emitting at the corresponding wavelengths to the measured emissions. For planar QDs, the PEE was simulated for the wavelength range of 900–930 nm and measured from nine different QDs.

Table 3. Structural Parameters of Fabricated Device Obtained from SEM Imaging (with Measurement Errors ≤5 nm) and the Simulated and Measured PEEs (NA = 0.81)a.

Table 3. Structural Parameters of Fabricated Device Obtained from SEM Imaging (with Measurement Errors ≤5 nm) and the Simulated and Measured PEEs (NA = 0.81)^a.