Table 4. Optimized Device Parameters and Simulated PEEs Obtained from the Optimizations with the Minimum w_econ of 120 nm and Other Parameter Search Ranges up to a Maximum of 1000 nm^a.

structure	device parameters (nm)					sim. PEE (%)
	wecon	rm	wg1,2	wr1,2	tetch
direct-ridge	120	256	960, 607	257, 628	630	55.65
mazy-ridge	120	256	960, 607	257, 628	630	56.54

^aThe PEEs (NA = 0.81) were calculated using a linearly polarized dipole oriented 45° to the x-axis emitting at the wavelength of 930 nm.