Table 1.

The deposition parameters for NiCr, NiSi, and SiO₂ films.

Experimental Parameters	NiCr Film	NiSi Film	Sio2 Film
Target (wt.%)	Ni90Cr10	Ni97Si3	Si
Target purity	99.9%	99.9%	99.99%
Target base distance (mm)	120	120	120
Working gas	Ar	Ar	Ar/O2
Working pressure (Pa)	0.7	0.7	0.6
Flow rate (sccm)	20	20	20/10
Inversion time (μs)	1	1	1
Pulse frequency (kHz)	100	100	100
Sputtering power density (W/cm2)	1.90	1.90	3.33
Film thickness (nm)	800 ± 50	800 ± 50	1000 ± 50
Sputtering time (min)	40	45	90