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. 2024 Oct 12;36(48):2408424. doi: 10.1002/adma.202408424

Figure 3.

Figure 3

Cross‐sectional transmission electron microscopy. Image of a 9 nm thick Si:C layer (C‐concentration of 3.8 × 1019 cm−3) capped with crystalline Si grown at T cap = 300 °C.