Figure 1.
Strategy for realization isotropic magnetoresistance. a) Schematic band structure for the ground state (zero magnetic field) of an AFM semiconductor insulator, showing a gap opening at the Fermi energy E F. Exchange energy Ex is zero due to the vanished net magnetic moment in AFM state, as illustrated in the bottom. b) Applying magnetic field polarizes the moments to form an FM state, creating strong net moment and turn on exchange interaction that split the band. Sufficiently strong exchange splitting drives a band to cross the E F, resulting in a metallic state. c) Isotropic magnetization. The magnetization (M) of the sample is induced and parallel to the external magnetic field (H), rotating in‐phase with the field rotation.