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. 2024 Nov 6;27(12):111327. doi: 10.1016/j.isci.2024.111327

Figure 3.

Figure 3

Preparation method of memristor based on ALD

(A) ALD growth process of the MoS2 film.55 Copyright © 2023, Royal Society of Chemistry.

(B) Pt-nanoparticle incorporated HfAlOx alloy memristor conductance modulation characteristics.56 Copyright © 2021, AIP Publishing.

(C) The 3D neural network of synaptic units.57 Copyright © 2020, American Chemical Society.

(D) Low temperature ALD process based oxide (HfAlOx) devices.

(E) The ability of multibit data storage.58 Copyright © 2020, John Wiley & Sons Australia.