Figure - PMC

Skip to main content

An official website of the United States government

Here's how you know

Here's how you know

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you've safely connected to the .gov website. Share sensitive information only on official, secure websites.

View full-text article in PMC

. 2024 Nov 7;14(6):1099–1112. doi: 10.1557/s43579-024-00660-2

Search in PMC
Search in PubMed
View in NLM Catalog
Add to search

© The Author(s) 2024

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/.

PMC Copyright notice

World Intellectual Property Organisation Patentscope search results from 2015 to July 2024 for the four included eNVM. The number of IP applications has been steadily increasing over the years. In line with Fig. 1, RRAM and MRAM are the frontrunner technologies, but the others are not far behind. Patentscope search settings were office = all, languages = en, stemming = FALSE, single family = FALSE, and including NPL = FALSE. Search terms for the individual eNVM technologies were as follows: ALLTXT:(“phase change random access memory”) or (“phase change RAM”), ALLTXT:(“ferroelectric RAM”) or (“ferroelectric random access memory”), ALLTXT:(“resistive random access memory”) or (“resistive RAM”), and ALLTXT:(“magnetoresistive RAM”) or (“magnetic RAM”) or (“magnetoresistive random access memory”) or (“magnetic random access memory”).