Table II.
Summary of top metrics from the detailed company information in the text.
| Metric | FRAM | PCRAM | RRAM | STT-MRAM | NOR flash | DRAM | SRAM |
|---|---|---|---|---|---|---|---|
| Endurance | 1015 (Infineon, Texas Instruments) | >107 (IBM/Macronix, SK hynix SOM*) | 1012 (Samsung) | 1016 (Avalanche) | 104–106 | 1016 | 1016 |
| Retention without power | 121 years at 85℃, 11K h at 125℃ (Infineon) | >10 years at 150℃ (STMicro) | 10 years at 105℃ (TSMC) | 20 years at 150℃ (TSMC), 106 years at 65℃ (Renesas) | >10 years | 100 µs | None |
| Write speed | 2 ns (Intel) | ≤20 ns (SK hynix SOM*) | 5/1 ns set/reset (Sony) | 1.5 ns (TDK) | 0.1–1 ms | ∼10 ns | ∼1 ns |
| Read speed | 2 ns (Intel) | ≤30 ns (SK hynix SOM*) | <5 ns (Intel) | 4 ns (TDK) | ∼10 ns | ∼10 ns | ∼1 ns |
| Switching voltages | 0.5 V (SK hynix) | <3 V (STMicro) | <1–1.5 V (Intel) | 0.8–2.0 V (Avalanche) | >5 V | <1 V | <1 V |
| Cell write energy | <100 fJ (Intel, projected) | <2.63/1.5–9 pJ set/reset (Samsung/KAIST) | 5 fJ (Samsung/POSTECH) | 0.7 pJ (Toshiba) | ∼100 pJ | ∼10 fJ | ∼fJ |
| Integration node | 45 nm line pitch (Micron) | 14 nm (IBM) | 12 nm CMOS (TSMC) | 14 nm CMOS (IBM) | 28 nm** | 10 nm (1c) (SK hynix) | 3 nm (TSMC) |
These metrics come from both product information and company research papers, to provide values ‘to beat’ by future research. The companies behind each achievement are included in parentheses and the corresponding references can be found in the “Company details” section below. Comma separations indicate that various companies have demonstrated the performance; slash separation indicates collaborations. The flash, DRAM, and SRAM values are taken from Refs. 5–7. Note that other companies besides SK hynix and TSMC have achieved similarly advanced DRAM & SRAM notes; these two are just examples.
*SOM: selector-only memory.
**Whilst NAND flash has been demonstrated down to the 1X-nm node, NOR flash (for embedded memory) generally stops at 28 nm.