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. 2024 Nov 20;9(48):47506–47518. doi: 10.1021/acsomega.4c06006

Figure 13.

Figure 13

(a) Transmittance of Si72Ge28 layers treated with a single pulse of energy ranging from 20 to 60 mJ. (b) Calculated absorbance enhancement factor of the single pulse treated samples in comparison to the as-grown a-Si72Ge28 layer for laser treatments from 20 to 60 mJ, respectively.