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. 2024 Nov 16;9(48):47710–47718. doi: 10.1021/acsomega.4c07598

Table 1. Effects of External Pressure P on the Electronic Band Gap and the Excitonic Responsesa.

P (GPa) Eg (PBE/HSE06) (eV) ΔEΓ (eV) ExΓ–Γ (eV) Exb (meV) ExHb,1 (meV)
0 1.36/1.73 4.130 4.000 133.0 23.66
15 1.12/1.40 3.899 3.830 70.0 18.35
30 0.81/1.16 3.661 3.608 53.0 18.75
44 0.40/0.88 3.496 3.448 48.0 17.92
59 0.07/0.59 3.388 3.335 54.0 19.00
74 metal/0.40 3.327 3.272 55.0 18.49
88 metal/0.15 3.306 3.244 62.0 17.93
103 metal/0.02 3.316 3.243 73.0 17.32
118 metal/metal 3.354 3.261 93.0 20.19
a

Here, Eg denotes the electronic band gap obtained using PBE and HSE06 frameworks, ΔEΓ denotes the HSE06-based Γ–Γ points energetic difference, ExΓ–Γ denotes the exciton state energy at the Γ point (MLWF-TB+BSE), Exb denotes the corresponding exciton binding energy (MLWF-TB+BSE) obtained by the difference of ΔEΓExΓ–Γ, and ExHb,1 is the ground state exciton binding energy calculated from the hydrogenic model.