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. 2024 Dec 12. Online ahead of print. doi: 10.1039/d4na00830h

Fig. 3. (a) Calculated binding energies and interlayer spacings in the γ-GeSe/Ga2SSe heterostructures for different arrangements. AIMD simulation of the total energy and temperature of the most energetically favorable arrangement (b) S2 for γ-GeSe/SGa2Se and (c) S6 for γ-GeSe/SeGa2S heterostructure.

Fig. 3