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. 2024 Dec 12. Online ahead of print. doi: 10.1039/d4na00830h

Calculated lattice constant (a Å), interlayer distance (D Å), binding energy (Eb meV Å−2), band gap (Eg eV), band nature and band alignment of the γ-GeSe/Ga2SSe heterostructure.

a D E b E g Band nature Band alignment
Monolayers γ-GeSe 3.74 0.57 Indirect
Ga2SSe 3.72 2.07 Indirect
γ-GeSe/SGa2Se S1 3.72 3.06 −15.75 0.78 Indirect Type-II
S2 3.72 3.0 −16.21 0.78 Indirect Type-II
S3 3.72 3.63 −10.67 0.78 Indirect Type-II
S4 3.72 3.65 −10.51 0.78 Indirect Type-II
S5 3.72 3.02 −15.90 0.78 Indirect Type-II
S6 3.72 3.0 −15.66 0.78 Indirect Type-II
γ-GeSe/SeGa2S S1 3.72 3.09 −17.10 0.77 Indirect Type-I
S2 3.72 3.06 −16.99 0.77 Indirect Type-I
S3 3.72 3.03 −16.85 0.77 Indirect Type-I
S4 3.72 3.67 −11.58 0.77 Indirect Type-I
S5 3.72 3.65 −11.66 0.77 Indirect Type-I
S6 3.72 3.02 −17.29 0.77 Indirect Type-I