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. 2024 Apr 17;78(12):1245–1255. doi: 10.1177/00037028241246292

Figure 1.

Figure 1.

(a) Schematic reproduction of the analyzed section of the Si0.7Ge0.3 epitaxial-on-SOI device; (b) three-dimensional view of the topography of the section, with a detailed description of its features (SiGe and Si regions are 50 and 20 µm wide, respectively).