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. 2024 Apr 17;78(12):1245–1255. doi: 10.1177/00037028241246292

Figure 2.

Figure 2.

(a) Schematic of the section and the position of the point measurements on the two different regions, i.e., SiGe (red spot) and Si (black spot); (b, c) comparison between local Raman acquisitions collected from the two different regions (SiGe in red and Si in black) with the 532 nm and 355 nm excitation wavelengths, respectively.