Table 1.
Elemental composition and thicknesses of the CuSbS2 films developed by sulfurizing Cu/Sb/Cu stacks at 400 and 430 oC for different durations.
| Sulfurization temperature | Sulfurization duration (min) | At. percent |
Ratio |
Thickness (μm) | |||
|---|---|---|---|---|---|---|---|
| Cu | Sb | S | Cu/Sb | S/(Cu+Sb) | |||
| 10 | 22.1 | 27.9 | 50.0 | 0.79 | 1.00 | 1.32 | |
| 400 oC | 30 | 22.2 | 27.0 | 50.8 | 0.82 | 1.03 | 1.31 |
| 60 | 22.9 | 26.0 | 51.0 | 0.88 | 1.04 | 1.35 | |
| 90 | 24.4 | 25.6 | 50.0 | 0.95 | 1.00 | 1.20 | |
| 10 | 25.8 | 25.0 | 49.2 | 1.03 | 0.97 | 1.16 | |
| 430 oC | 30 | 25.2 | 25.2 | 49.6 | 1.00 | 0.98 | 1.19 |
| 60 | 24.7 | 25.8 | 49.5 | 0.96 | 0.98 | 1.21 | |
| 90 | 25.2 | 24.2 | 50.6 | 1.04 | 1.02 | 1.19 | |