Table 2.

Structural parameters of the CuSbS₂ thin films developed by sulfurizing Cu/Sb/Cu stacks at 400 and 430 ^oC for different durations.

Sulfurization temperature	Duration (min)	2θ (degrees)	${\beta }_r$ (degrees)	Crystallite size D (nm)	Strain ϵx10−3	Dislocation density δx10−3 (nm−2)
400 oC	10	28.39	0.382	22.4	0.48	1.99
	30	28.39	0.382	22.4	0.48	1.99
	60	28.40	0.331	25.9	0.19	1.49
	90	28.41	0.331	25.9	0.19	1.49
430 oC	10	28.39	0.382	22.4	0.48	1.99
	30	28.41	0.331	25.9	0.19	1.49
	60	28.41	0.331	25.9	0.19	1.49
	90	28.43	0.331	25.9	0.19	1.49