Table 2. Summary of Device Parameters for Bulk-Heterojunction (BHJ) OSCs with and without PVDF-Based Ferroelectric Additives under AM 1.5G Irradiation at 100 mW cm^–2a.

Additive	Concentration	Jsc (mA cm–2)	Voc (V)	FF (%)	PCE (%)
As-castb	–	11.84 ± 0.68	0.790 ± 0.005	45.3 ± 1.5	4.23 ± 0.44 (4.67)
NMP onlyb	3.0 vol %	19.13 ± 0.30	0.796 ± 0.003	65.4 ± 0.3	9.96 ± 0.24 (10.20)
P1b	1.5 wt %	19.83 ± 0.36	0.803 ± 0.001	61.5 ± 0.7	9.79 ± 0.31 (10.10)
P2b	1.5 wt %	20.01 ± 0.29	0.810 ± 0.002	66.1 ± 0.4	10.72 ± 0.30 (11.02)
P3b	2.0 wt %	19.75 ± 0.32	0.794 ± 0.001	65.0 ± 0.8	10.20 ± 0.30 (10.50)
P4b	1.5 wt %	19.78 ± 0.31	0.805 ± 0.002	66.4 ± 0.4	10.58 ± 0.25 (10.83)
As-castc	–	17.01 ± 0.15	0.829 ± 0.004	62.1 ± 1.2	8.84 ± 0.20 (9.04)
P2c	1.0 wt %	18.94 ± 0.15	0.829 ± 0.002	73.9 ± 0.3	11.61 ± 0.15 (11.76)

^aFerroelectric additives are marked in bold. Data corresponds to the average value of 10 devices and deviation from its maximum; data in parentheses corresponds to the maximum values.

^bPTB7-Th:PC71BM based OSC devices.

^cPM6:IT-4F based OSC devices. Adapted with permission from ref (10). Copyright 2020 Elsevier.