Table 1.

Comparison of materials and synaptic parameters for V_O-VCM-based memristive synapse.

Materials	Pulse Condition for LTP and LTD				Dynamic Range	Linearity (LTP/LTD)	Pattern Recognition Accuracy	Ref.
	Pulse Scheme	VLTP/VLTD	tLTP/tLTD	t inter
Pt/HfO2/HfOx/TiN	Identical	–0.8 V/2 V	1 μs/2 μs		~0.3~0.7 mA			[28]
TiN/Al:HfO2/TiN	Identical	2.5 V/–2.4 V	100 μs		3~9 μS	22%/60%	94.5%	[29]
Au/TiO2/Au	Identical	10 V/–10 V	50 ms	50 ms	~0.1~1 μA			[31]
ITO/TiOx/TiOy/TiN	Identical	1 V/–1 V	50 μs		~240~47 μA	0.89/0.69		[32]
W/WO3−x/Pt	Identical	1.8 V/–1.8 V	400 μs		~28~32 mA	0.81		[34]
Pt/Ta2O5/HfO2/TiN	Incremental	0.8~–1.2 V/1~1.2 V	10 μs		0~6 mS	27.03%/27.23%	69.88	[35]
Au/LiNbO3/Pt	Identical	+15 V/–15 V	100 ms		~17~23 μA			[37]
Au/LiNbO3/Pt	Identical	4 V/–4 V	40 ms	50 ms	~22~29 μA	1.2/2.7		[36]
This Work	Incremental	2~4.5 V/–0.5~3.5 V	300 μs/500 μs	10 ms	0~2 μA	0.16/0.32	95.2%