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. 2024 Nov 4;25(1):2423600. doi: 10.1080/14686996.2024.2423600

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© 2024 The Author(s). Published by National Institute for Materials Science in partnership with Taylor & Francis Group.

This is an Open Access article distributed under the terms of the Creative Commons Attribution-NonCommercial License (http://creativecommons.org/licenses/by-nc/4.0/), which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited. The terms on which this article has been published allow the posting of the Accepted Manuscript in a repository by the author(s) or with their consent.

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Figure 12. — Heteroepitaxial growth and optoelectronic properties of perovskite-type LaWN₃ thin films. (a) Optimization of film-growth conditions: T_s and P_W denote substrate temperature and rf power density of a tungsten cathode, respectively. The optimum region for epitaxial growth is indicated by red. (b) Epitaxial relationship of the optimally grown film. (c) Temperature dependence of the electrical conductivity (σ) of the epitaxial film. The inset shows resistivity (ρ = 1/σ) in an extremely low temperature region of ≤0.9 K under external magnetic fields. (d) The optical absorption coefficient (α) spectrum of the epitaxial film. The inset is a sample picture. Adapted with permission from ref. [135]. Copyright 2023 American chemical society.