Parameters	ITO46	ZnO35	MoTe2 23	N-doped Cu2O17
Thickness, (μm)	0.050	0.100	1.250	0.100
Band-gap, Eg (eV)	3.60	3.20	1.10	2.60
Electron affinity, χ (eV)	4.50	4.00	4.20	3.20
Dielectric constant, εr	8.90	9.00	13.0	6.60
Effective DOS at conduction band density, Nc (cm−3)	2.20 × 1018	4.00 × 1018	4.00 × 1016	2.50 × 1020
Effective DOS at valence band density, Nv (cm−3)	1.80 × 1019	2.00 × 1019	3.00 × 1018	2.50 × 1020
Electron thermal velocity, (cm s−1)	1.00 × 107	1.00 × 107	1.00 × 107	1.00 × 107
Hole thermal velocity, (cm s−1)	1.00 × 107	1.00 × 107	1.00 × 107	1.00 × 107
Electron carrier mobility, μn (cm2 V−1 S−1)	50.00	100.0	110.0	0.10
Hole carrier mobility, μp (cm2 V−1 S−1)	10.00	25.00	426.0	10.00
Donor concentration, ND (cm−3)	1.00 × 1021	1.00 × 1016	0.00	0.00
Acceptor concentration, NA (cm−3)	1.00 × 107	0.00	1.00 × 1015	1.00 × 1019
Defect density, Nt (cm−3)	1.00 × 1014	1.00 × 1014	1.00 × 1013	1.00 × 1015