. 2024 Dec 19;14(54):39954–39967. doi: 10.1039/d4ra05974c

Table 3. Extracted values of K₁ and K₂ from Fig. 8 and recombination coefficient for MoTe₂-based PVSCs with and without N-doped Cu₂O BSF layer. Here, R^d₀, R^i,b₀, R^d, R^i,b, and S^b_e are calculated at a bias voltage of 1.0 V.

Condition	K ^SW	K ^LW	K ^WL	K ^SW	K ^LW	K ^WL	R ^d (cm⁻² s⁻¹)	R ^i,b (cm⁻² s⁻¹)	R ^d (cm⁻² s⁻¹)	R ^i,b (cm⁻² s⁻¹)	S ^b (cm s⁻¹)
Without N-doped Cu₂O-BSF layer	10 073	14 173.8	9748.3	2076.7	2110.4	2901	1.1 × 10⁸	1.6 × 10³	2.77 × 10¹⁶	3.98 × 10¹¹	200
with N-doped Cu₂O-BSF layer	2.56 × 10⁹	1.36 × 10¹¹	3.64 × 10⁹	0.1676	0.0049	0.123	7.1 × 10⁶	1.3 × 10⁻³	1.75 × 10¹⁵	3.35 × 10⁵	1.69 × 10⁻³

Table 3. Extracted values of K1 and K2 from Fig. 8 and recombination coefficient for MoTe2-based PVSCs with and without N-doped Cu2O BSF layer. Here, Rd0, Ri,b0, Rd, Ri,b, and Sbe are calculated at a bias voltage of 1.0 V.