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. 2024 Dec 23;14(54):40077–40085. doi: 10.1039/d4ra06901c

Fig. 2. (a) The planar-averaged charge density difference Δρ(z) of the InS/ZnIn2S4 heterostructure (inset: three-dimensional charge density difference Δρ). Red regions indicate electron accumulation, while blue regions signify electron depletion. (b) The planar-averaged electrostatic potential of the InS/ZnIn2S4 heterostructure along the z-axis. The potential drop ΔV at the interface is 1.82 eV. The pink arrow indicates the direction of the built-in electric field.

Fig. 2