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. 2024 Dec 23;14(54):40077–40085. doi: 10.1039/d4ra06901c

Fig. 4. The band alignments (a), band gaps (b), and charge transfer (c) of the InS/ZnIn2S4 heterostructure under different electric fields. (d) The η of the InS/ZnIn2S4 heterostructure as a function of ΔEc and Edg under different electric fields.

Fig. 4