Lowest price |
SnO2:F |
Least harmful |
SnO2:F; ZnO:F |
Optimal resistance to H plasmas |
ZnO:F |
Maximum frequency of plasma |
In2O3:Sn; TiN; Ag |
Minimum frequency of plasma |
ZnO:F; SnO2:F |
Maximum conductivity |
In2O3:Sn |
Maximum transparency |
Cd2SnO4; ZnO:F |
Maximum work function; best contact to p-Si |
ZnSnO3; SnO2:F |
Minimum work function; best contact to n-Si |
ZnO:F |
Optimal thermal stability |
Cd2SnO4; SnO2:F; TiN |
Optimal chemical durability |
SnO2:F |
Optimal mechanical durability |
SnO2:F; TiN |
Minimum deposition temperature |
ZnO:B; In2O3:Sn; Ag |
Easily etched |
TiN; ZnO:F |