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. 2024 Dec 30;15:10780. doi: 10.1038/s41467-024-53935-6

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© The Author(s) 2024

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 3 — a Scanning electron microscope (SEM) image of 2DP-F thin film suspended over a holey substrate. b Tapping mode AFM image of the suspended 2DP-F thin film. c Load versus indentation depth curves of the 2DP-F thin films with varied thicknesses. Inset demonstrated the AFM indentation experiment on a suspended film. d Tapping mode AFM image of suspended 2DP-F film and corresponding line profile before (top) and after (bottom) indentation experiment. e Statistic histogram of the 2D modulus and the 2D stress of 2DP-F thin films, with more than 40 data points measured for each sample condition. f Corresponding Young’s modulus and breaking strength of 2DP-F thin films. The error bars were based on more than 30 data point for each thickness. g Comparisons of many low-k dielectric materials as mapped in the normalized Young’s modulus vs. dielectric constant plot^39,44–53.