Table 4.

Comparison of current work of h-BN-based photodetector devices with the previous work.

hBN-based device	Wavelength (nm)	Growth technique /characteristic	Photoresponsivity (mA/W)	Detectivity (Jones)	Response time	References
hBN Nanosheets	254	Short pulse CO2 laser plasma deposition/bulk layer	1.5	–		56,57
hBN Nanosheets	250	Solid state reaction/multilayer	5.022	6.1 × 1012	0.2 s	58
Single-crystalline hBN	UV light	Atmospheric Chemical Vapor Deposition (CVD)/ monolayer	5.45	8.62 × 109	376, 198 ms	59
hBN nanoflakes	205	Electron beam lithography/multilayer	5.2	–	1.2 s, 6.8 s	60
hBN layer	VUV light	Mechanical exfoliation/multilayer	1000	–	–	61
MoS2/h-BN/Graphene/Si	532	Wet chemical transfer/multilayer	300	–	10 s	62
Si/Graphene/h-BN/MoS2	532	CVD/ monolayer	360	6.70 × 1011	–	63
Al2O3/h-BN/Graphene/h-BN/Si	610–1000	Electron beam lithography/multilayer	27	–	17 ns	64
Au-hBN	532	Electron beam evaporation/multilayer	1330	1.03 × 1011	279 µs	This work
Ag-hBN	532	Electron beam evaporation/multilayer	1340	5.23 × 1010	266 µs	This work
Au/Ag-hBN	532	Electron beam evaporation/multilayer	870	7.35 × 1010	261 µs	This work